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Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFH20N100P
IXFT20N100P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
1000V
20A
570 m Ω
300 ns
Fast Intrinsic Diode
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
1000
1000
V
V
TO-247 (IXFH)
V GSS
V GSM
I D25
I DM
I AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
± 30
± 40
20
50
10
V
V
A
A
A
TO-268 (IXFT)
TAB
E AS
dV/dt
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
800
15
mJ
V/ns
G
S
TAB
P D
T C = 25 ° C
660
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T L
T SOLD
M d
Weight
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
300
260
1.13/10
6
5
° C
° C
Nm/lb.in.
g
g
Features
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High power density
BV DSS
V GS = 0V, I D = 1mA
1000
V
Applications:
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 200
V
nA
Switched-mode and resonant-mode
power supplies
I DSS
V DS = V DSS
V GS = 0V
T J = 125 ° C
25 μ A
1.5 mA
DC-DC Converters
Laser Drivers
AC and DC motor controls
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
470
570 m Ω
Robotics and servo controls
? 2008 IXYS CORPORATION, All rights reserved
DS99843B(04/08)
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